AP9916H (9916H)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9916H (9916H)產品介紹
|
AP9916H (9916H) Features
|
‧Low on-resistance
|
‧Capable of 2.5V gate drive
|
‧Low drive current
|
‧Single Drive Requirement
|
|
AP9916H (9916H) Absolute Maximum Ratings
|
Standard
|
Parameter
|
Rating
| Units |
VDS
|
Drain-Source Voltage
|
18
|
V |
VGS
|
Gate-Source Voltage
|
± 12
|
V |
ID@TC=25℃
|
Continuous Drain Current, VGS @ 4.5V
|
35
|
A |
ID@TC=25℃ |
Continuous Drain Current, VGS @ 4.5V |
16 |
A |
IDM |
Pulsed Drain Current1
|
90 |
A |
PD@TC=25℃ |
Total Power Dissipation |
50 |
W |
|
Linear Derating Factor |
0.4 |
W/℃ |
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
|
AP9916H (9916H) Thermal Data
|
Symbol
|
Parameter
|
Value
| Unit |
Rthj-c
|
Thermal Resistance Junction-case Max.
|
2.5
|
℃/W |
Rthj-a
|
Thermal Resistance Junction-ambient Max.
|
110
|
℃/W |
|
|
|
AP9916H (9916H)Datasheet: |