DMG6602SVT-7

Product Category:

MOSFET

Manufacturer:

Diodes Incorporated

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSOT-26-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V, 30 V

Id - Continuous Drain Current:

3.4 A, 2.8 A

Rds On - Drain-Source Resistance:

100 mOhms, 140 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Reel

Channel Mode:

Enhancement

Brand:

Diodes Incorporated

Configuration:

1 N-Channel, 1 P-Channel

Fall Time:

3 ns

Forward Transconductance - Min:

4 S

Pd - Power Dissipation:

840 mW

Rise Time:

5 ns

Series:

DMG6602

Transistor Type:

1 N-Channel, 1 P-Channel

Typical Turn-Off Delay Time:

13 ns

Typical Turn-On Delay Time:

3 ns